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Sentaurus 20189/2/2023 ![]() ![]() This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Note: Springer Nature eBook Contents: Introduction of Synopsys Sentaurus TCAD 2014 version software environment operation interface and tools - Simulation analysis of 2D MOSFET - Simulation analysis of 3D FinFET with LG = 15 nm - Simulation analysis of Inverter and SRAM of 3D FinFET with LG = 15 nm - Simulation analysis of GAA NWFET - Simulation analysis of Junctionless FET with LG = 10 nm - Simulation analysis of Tunnel FET - Simulation analysis of Si and Ge 3D FinFET with LG = 3 nm. (Author) (role) Corporate author: SpringerLink (Online service) Edition: 1st ed. : Title: 3D TCAD Simulation for CMOS Nanoeletronic Devices / by Yung-Chun Wu, Yi-Ruei Jhan. ![]()
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